Title:
半導体装置及びその作製方法
Document Type and Number:
Japanese Patent JP6884569
Kind Code:
B2
Abstract:
A semiconductor device includes a first barrier layer having a barrier property against oxygen and hydrogen over a substrate, a first insulator over the first barrier layer, a second insulator over the first insulator, a third insulator over the second insulator, a transistor including an oxide semiconductor over the third insulator, a fourth insulator including an oxygen-excess region over the transistor, and a second barrier layer having a barrier property against oxygen and hydrogen over the fourth insulator. The transistor includes a first conductor with oxidation resistance, a second conductor with oxidation resistance, and a third conductor with oxidation resistance, the second insulator includes a high-k material, the first barrier layer and the second barrier layer are in contact with each other in an outer edge of a region where the transistor is provided, and the transistor is surrounded by the first barrier layer and the second barrier layer.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2016245624A
Publication Date:
June 09, 2021
Filing Date:
December 19, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/8242; H01L27/10; H01L27/108
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