Title:
半導体装置
Document Type and Number:
Japanese Patent JP6905395
Kind Code:
B2
Abstract:
A semiconductor device includes a first semiconductor layer of silicon carbide, a second semiconductor layer of nitride semiconductor, a third semiconductor layer of nitride semiconductor and a drain electrode. The semiconductor device includes a source electrode that has a first projection portion, a conduction electrode that has a second projection portion and a gate electrode. The first semiconductor layer includes a first region, a second region, a third region and a fourth region.
Inventors:
Masao Koyama
Kentaro Ikeda
Kazuto Takao
Kentaro Ikeda
Kazuto Takao
Application Number:
JP2017118990A
Publication Date:
July 21, 2021
Filing Date:
June 16, 2017
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L21/337; H01L21/338; H01L29/06; H01L29/12; H01L29/417; H01L29/778; H01L29/808; H01L29/812
Domestic Patent References:
| JP2010267958A | ||||
| JP2013507789A | ||||
| JP2012156320A | ||||
| JP2008258419A | ||||
| JP2015046468A | ||||
| JP2013140956A |
Attorney, Agent or Firm:
Takumi Hara
Boxwood Shusaku
Toru Konno
Yoshiteru Numao
Tezuka History Exhibition
Boxwood Shusaku
Toru Konno
Yoshiteru Numao
Tezuka History Exhibition