Title:
発光素子の製造方法
Document Type and Number:
Japanese Patent JP7344434
Kind Code:
B2
Abstract:
The forming of the tunnel junction layer includes forming a first n-type layer, forming a second n-type layer by introducing a first raw material gas into a furnace at a first temperature, the first raw material gas including a first gas having a first flow rate, and forming a third n-type layer by introducing a second raw material gas into a furnace at a second temperature, the second raw material gas including a second gas having a second flow rate, the second temperature being less than the first temperature. A first flow rate ratio of the first gas in the first raw material gas is greater than a second flow rate ratio of the second gas in the second raw material gas.
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Inventors:
Yoshitaka Kawada
Application Number:
JP2021147942A
Publication Date:
September 14, 2023
Filing Date:
September 10, 2021
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01L33/04
Domestic Patent References:
| JP2021106245A | ||||
| JP2019517144A | ||||
| JP2018201009A | ||||
| JP2008141047A |
Foreign References:
| US20190074404 |
Attorney, Agent or Firm:
Masahiko Hyugaji
Junichi Kozaki
Takato Uchida
Junichi Kozaki
Takato Uchida