Title:
ＦｅＧａ単結晶育成用種結晶及びＦｅＧａ単結晶の製造方法
Document Type and Number:
Japanese Patent JP7349100
Kind Code:
B2
Abstract:
To provide: a seed crystal for FeGa single crystal growth capable of easily matching the melting point of a raw material melt in the vicinity of the seed crystal with the melting point of a molten seed crystal when seeding in the raw material melt by a VB method or a VGF method and reducing polycrystal or anisotropic growth during growth; a method for manufacturing the same; and a method for manufacturing a FeGa single crystal.SOLUTION: The seed crystal for FeGa single crystal growth used for FeGa single crystal growth by a unidirectional solidification crystal growth method for solidifying a melt in a crucible has a concentration distribution that a Ga concentration is higher from one end toward the other end in the crystal growth direction.SELECTED DRAWING: Figure 3
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Inventors:
Katsuhiko Okano
Prince Toshinori
Keigo Hoshikawa
Prince Toshinori
Keigo Hoshikawa
Application Number:
JP2019061041A
Publication Date:
September 22, 2023
Filing Date:
March 27, 2019
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
Shinshu University
Shinshu University
International Classes:
C30B29/52; C30B11/14
Domestic Patent References:
| JP1179796A |
Other References:
泉聖志 他,垂直ブリッジマン(VB)法によるFeGa単結晶の育成,第47回結晶成長国内会議(JCCG-47)予稿集,2018年,02a-D01
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito