Title:
【発明の名称】分子線エピタキシー法による酸化物超伝導体薄膜の製造方法
Document Type and Number:
Japanese Patent JPH07108765
Kind Code:
B2
Abstract:
Monatomic layers each formed of a single metal are sequentially formed on a substrate using a molecular-beam epitaxy to form a multilayered metal film consisting of a plurality of types of metals, and sequentially with formation the monatomic layers, nitrogen dioxide gas as an oxidizer is supplied to oxidize the multilayered metal film. The same operation is repeatedly performed a predetermined number of times to form an oxide high-temperature superconductor thin film having a predetermined thickness.
Inventors:
Maki Kawai
Shunji Watanabe
Shunji Watanabe
Application Number:
JP9848490A
Publication Date:
November 22, 1995
Filing Date:
April 13, 1990
Export Citation:
Assignee:
Tokyo Institute of Technology
International Classes:
C01B13/14; C01G1/00; C01G29/00; C30B23/08; C30B29/22; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C01B13/14; C01G1/00; C01G29/00; C30B23/08; C30B29/22; H01B12/06; H01B13/00; H01L39/24
Domestic Patent References:
| JP2133316A |
Other References:
【文献】英国特許公開2211209(GB,A)
Attorney, Agent or Firm:
Takehiko Suzue (3 outside)