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Title:
【発明の名称】磁気記憶素子
Document Type and Number:
Japanese Patent JPH0828114
Kind Code:
B2
Abstract:
PURPOSE:To raise the stability of storage information, and to execute a high density storage by providing a means for writing a fluxoid quantum by a pre scribed number, and a means for reading out the number of fluxoid quanta which are written, in a hole formed in a superconductor thin film. CONSTITUTION:In order to trap a fluxoid quantum to a hole 2 of a designated address, a pulse of a current is sent to a Y-line and an X-line connected to a heating element placed in this hole. For instance, when a pulse current is applied simultaneously to a Y0-line and an X0-line, a superconductor 1 in the periphery of the hole existing in an intersection of both the lines becomes a normal conductor, and by applying a magnetic field having an intensity, which can confine a prescribed number of fluxoid quanta in the hole formed in the part transferred to the normal conductor, a signal corresponding to a prescribed data pattern can be written to an arbitrary coordinate of a matrix. At the time of reading it out, a pulse current is applied to a voltage applied line Y0 of a Hall element. When a signal is outputted to a Hall voltage detecting line X0 in accordance with this variation, moreover, when the amplitude of a Hall voltage is detected, it corresponds to the number of fluxoid quanta which are trapped, therefore, the contents of prescribed information can be known.

Inventors:
Yasuharu Hitaka
Urai Haruo
Application Number:
JP17219887A
Publication Date:
March 21, 1996
Filing Date:
July 10, 1987
Export Citation:
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Assignee:
NEC
International Classes:
G01R33/07; G01R33/06; G11C11/14; H01L27/10; H01L39/22; (IPC1-7): G11C11/14
Domestic Patent References:
JP6174199A
JP5472927A
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)



 
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