Document Type and Number:
Japanese Patent JPS50116185
Kind Code:
A
Abstract:
A majority charge carrier semiconductor structure including a relatively heavily doped n type support layer, a second n type layer formed on the support layer and having a relatively light doping, a p layer formed on the second n layer, and a third n type layer having a relatively heavy doping formed atop the p layer. When voltage means is applied between top and support layers principal current flow is by majority charge carriers in either direction determined by the polarity of a pre-determined voltage. Current flow occurs substantially below the critical electric field, and free of avalanche multiplication or tunneling. In alternate embodiments the doping impurity concentration may be varied to alternately provide a device wherein the magnitude of voltage reference which determines current flow in one direction or in the opposite direction may be symmetrical, asymmetrical or highly asymmetrical.
Application Number:
JP1735575A
Publication Date:
September 11, 1975
Filing Date:
February 10, 1975
Export Citation:
International Classes:
H01L21/8222; H01L25/07; H01L29/00; H01L29/66; H01L27/06; H01L29/861; H01L29/866; (IPC1-7): H01L27/04; H01L29/06; H01L29/90; H01L49/00
Domestic Patent References:
| JP38024165A |