Document Type and Number:
Japanese Patent JPS50116186
Kind Code:
A
Abstract:
1452882 Semi-conductor devices RCA CORPORATION 6 Feb 1975 [11 Feb 1974] 5014/75 Heading H1K A Zener diode in an integrated structure has a first region 22 of one conductivity type comprising two diffused portions, a first portion 24 being of higher impurity concentration and being overlapped by less than the whole of its area by a second, shallower portion 26 of weaker impurity concentration. A second region 34 is of opposite type and forms a PN junction with the first region 22 with part of the junction within the zones of maximum concentration of the two regions. During diffusion of the portion 26 an area is masked to create an aperture in this portion (Fig. 4, not shown) so that less than all the portion 24 is overlapped. The diffusion is carried out in an oxidizing atmosphere and the resulting oxide layer segregates the impurities leaving a concentration in the overlap zone between the two portions less than that in the first portion 24 outside this zone. Contact is made to the N + region only over the shallow P portion 26 of the first P region.
Application Number:
JP1733575A
Publication Date:
September 11, 1975
Filing Date:
February 10, 1975
Export Citation:
International Classes:
H01L21/8222; H01L27/00; H01L29/00; H01L27/06; H01L29/866; (IPC1-7): H01L27/02; H01L29/90
Foreign References:
| US3735210A | 1973-05-22 |