PURPOSE: To further enhance the charge retentivity without deteriorating other superior characteristics, by laminating a photoconductive amorphous silicon (a-Si) layer contg. a specified percentage of 0 and a surface covering a-Si layer contg. a specified percentage of 0 on an electrically conductive support.
CONSTITUTION: A photoconductive a-Si layer contg. about 10-5W5×10-2atomic% 0 and having 5W100μm thickness is formed on an electrically conductive substrate 1 with a glow discharge dissociation apparatus. Especially, a capacity coupling type high-frequency glow discharge dissociation method is advantageously applied because uniform discharge is generated over a large area. A surface covering a-Si layer 3 contg. About 5×10-2W1.0atomic% 0 and 0.05W5μm thickness is then formed on the layer 2 with the same apparatus. Both the layers 2, 3 contain about 10W40atomic% H and about 10W20,000ppm impurity such as B or other element belonging to the IIIa group in the periodic table. By keeping the 0 concn. of the layer 2 relatively low and that of the layer 3 relatively high and increasing the thicknesses of the layers, the charge retentivity is enhanced without deteriorating other superior characteristics such as high photosensitivity to give a superior image.
IWANO HIDEAKI
MIYAMOTO NAOOKI
NISHIGUCHI YASUO
KAWAMURA TAKAO