強磁性二重トンネル接合素子及び磁気デバイス - Independent administrative institution Japan Science and Technology Agency

Title:

強磁性二重トンネル接合素子及び磁気デバイス

Document Type and Number:

Japanese Patent JPWO2006112119

Kind Code:

A

More Like This:

WO/2004/040667	NON-VOLATILE MEMORY CELL, MEMORY CELL ARRANGEMENT AND METHOD FOR PRODUCTION OF A NON-VOLATILE MEMORY CELL
JPH08125147	FABRICATION OF INTEGRATED CIRCUIT DEVICE
JP3977079	Ferroelectric transistors and how to use them in memory cell structures

Inventors:

Tetsuka 展規
Koichiro Inomata

Application Number:

JP2006302545W

Publication Date:

October 26, 2006

Filing Date:

February 14, 2006

Export Citation:

Assignee:

Independent administrative institution Japan Science and Technology Agency

International Classes:

H01L21/8246; H01L27/105; H01L43/08; H01L29/82; H01L43/10

Attorney, Agent or Firm:

Kota Ogawa
Kazuyuki Hirayama
Tetsuya Shinoda

Previous Patent: 作業台

Next Patent: CONSTRUCTION MACHINE