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Title:
OPTICAL SEMICONDUCTOR ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT AND OPTICAL MODULATION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/013693
Kind Code:
A1
Abstract:
Provided is an optical semiconductor element wherein an i-type Si semiconductor layer is arranged between an n-type Si semiconductor layer or a p-type Si semiconductor layer and an i-type SixGe1-x semiconductor layer (0≤x≤0.6), namely, the optical semiconductor element wherein the p-type Si semiconductor layer, the i-type SixGe1-x semiconductor layer (0≤x≤0.6), the i-type Si semiconductor layer, and the n-type Si semiconductor layer are sequentially laminated or alternatively, the optical semiconductor element wherein the n-type Si semiconductor layer, the i-type SixGe1-x semiconductor layer (0≤x≤0.6), the i-type Si semiconductor layer, and the p-type Si semiconductor layer are sequentially laminated.

Inventors:
WADA KAZUMI (JP)
ISHIKAWA YASUHIKO (JP)
PARK SUNGBONG (JP)
Application Number:
PCT/JP2009/063394
Publication Date:
February 04, 2010
Filing Date:
July 28, 2009
Export Citation:
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Assignee:
UNIV TOKYO (JP)
WADA KAZUMI (JP)
ISHIKAWA YASUHIKO (JP)
PARK SUNGBONG (JP)
International Classes:
H01L31/10
Foreign References:
JPH09260710A1997-10-03
JP2008140808A2008-06-19
JP2001284630A2001-10-12
JPH06224459A1994-08-12
Other References:
A. VONSOVICI ET AL.: "Room Temperature Photocurrent Spectroscopy of SiGe/Si p-i-n Photodiodes Grown by Selective Epitaxy", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 45, no. 2, February 1998 (1998-02-01), pages 538 - 542
Z. HUANG ET AL.: "Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 43, no. 3, March 2007 (2007-03-01), pages 238 - 242
Attorney, Agent or Firm:
OKADA, Kenji et al. (JP)
Kenji Okada (JP)
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