To restrain the generation of blooming, enable increasing the signal charge amount, and improve, for solving the above, the uniformity of impurity distribution of a channel stop region under a drain region, and the position deviation of the channel stop region which is caused by position alignment.

A second conductivity type overflow barrier region 53 and a first conductivity type semiconductor region 54 are formed in order on a first conductivity type semiconductor substrate 52. An amplifying picture element transistor constituted of a source region 57, a drain region 58 and a gate part (sate electrode 56) is formed in the first conductivity type semiconductor region 54. At a position deeper than the source region 58 and the drain region 57 in the first conductivity type semiconductor region 57, a second conductivity type channel stop region 71 to signal charge stored in the first conductivity type semiconductor region of the gate part is so formed that the region 71 overlaps with the drain region 58 and a part of the gate part.