Title:
APPARATUS AND METHOD OF PLASMA ETCHING
Document Type and Number:
Japanese Patent JP2007242777
Kind Code:
A
Abstract:
To solve the problem that it is difficult to secure in-plane uniformity of a CD shift of a gate electrode when plasma-etching for the purpose of forming the gate electrode on a material to be processed with a large diameter.
Processing gases each having a different flow rate and different composition are led from a position opposite to the material to be processed, and from an upper corner or a side face of a processing chamber into the processing chamber.
COPYRIGHT: (C)2007,JPO&INPIT
Inventors:
MIYA TAKESHI
ITABASHI NAOSHI
SUGANO SEIICHIRO
MAKINO AKITAKA
AKIYAMA HIROSHI
ITABASHI NAOSHI
SUGANO SEIICHIRO
MAKINO AKITAKA
AKIYAMA HIROSHI
Application Number:
JP2006060934A
Publication Date:
September 20, 2007
Filing Date:
March 07, 2006
Export Citation:
Assignee:
HITACHI HIGH TECH CORP
International Classes:
H01L21/3065
Attorney, Agent or Firm:
Patent Business Corporation Daiichi International Patent Office