Title:
バイポーラトランジスタの製造方法
Document Type and Number:
Japanese Patent JP7025817
Kind Code:
B2
Abstract:
To provide a method of manufacturing a bipolar transistor that has a small chip area and that can adjust an emitter resistance.SOLUTION: Provided is a method of manufacturing a bipolar transistor in which at least a part of an electrode is formed by a polycrystal film 1p. An emitter electrode 1p consisting of a polycrystal film (a polysilicon film) connected with an emitter region is formed, and single crystallization of a part of the emitter electrode 1p is performed. As a result, a resistance value of the emitter electrode 1p becomes low, and characteristics of the bipolar transistor can be adjusted.SELECTED DRAWING: Figure 4
Inventors:
Araki Shinichi
Application Number:
JP2017225842A
Publication Date:
February 25, 2022
Filing Date:
November 24, 2017
Export Citation:
Assignee:
New Japan Radio Microdevices Co., Ltd.
International Classes:
H01L21/331; H01L21/20; H01L29/732
Domestic Patent References:
| JP59047763A | ||||
| JP57211226A | ||||
| JP2007142273A | ||||
| JP63197382A | ||||
| JP2000068282A | ||||
| JP6037103A |
Foreign References:
| US6468871 |
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