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Title:
多結晶シリコンインゴットの鋳造方法、これを用いた多結晶シリコンインゴット、多結晶シリコン基板、並びに太陽電池素子
Document Type and Number:
Japanese Patent JP4726454
Kind Code:
B2
Abstract:

To provide a casting method of a polycrystalline silicon ingot by which the loss of a molten metal is reduced when an assemble system casting mold exhibiting high cost merit is used, a polycrystalline silicon ingot attaining both of high quality and low cost, a polycrystalline silicon substrate and a solar cell element using the same.

The casting method of the polycrystalline silicon ingot includes a pouring step for pouring a molten silicon 4 obtained by melting silicon to the casting mold 5 formed by assembling a plurality of members to be partially opened at one part from the opening part of the casting mold 5 and a solidifying step for solidifying the molten silicon 4 while keeping it in the casting mold 5. In the pouring step, gaps 10 among the plurality of the members constituting the casting mold 5 are sealed by an initial solidified layer 11 formed by solidifying the molten silicon 4 being brought into contact with the inner surface of the casting mold 5.

COPYRIGHT: (C)2006,JPO&NCIPI


Inventors:
Yamatani Muneyoshi
Application Number:
JP2004270209A
Publication Date:
July 20, 2011
Filing Date:
September 16, 2004
Export Citation:
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Assignee:
Kyocera Corporation
International Classes:
C01B33/02; B22D7/00; B22D7/06; B22D27/04; H01L31/04; B22D23/00
Domestic Patent References:
JP2002292449A
JP2004174527A
JP11189407A
JP62108515A
JP6127925A
JP8217436A
JP10190025A
JP11180711A
JP2002308616A
JP2003247783A
JP2004196577A