PURPOSE: To reduce the noise due to flowing-in of unnecessary carrier in a solid image device and the like by a method wherein a defectless regions having different depth are provided on the substrate surface, on the inside of which a high density faulty region was formed, and a charge accumulation type element is formed in a deep defectless region.

CONSTITUTION: A heat-treatment (600∼900°C) is performed on a P type substrate 11 in a non-oxidizing atmosphere, and after crystal defect generating nuclei containing oxygen are formed all over the above substrate, oxide films 12 and 12' are provided in such a manner that the films will be thinned off in the element region, and defectless regions 13 and 13' are formed on the surface by performing a heat-treatment at 900∼ 1,000°C. The region 13' which is 20∼40μm deep is surrounded by a P+ isolation layer 16, and after an accumulation electrode 18, a gate electrode 19 and a transfer electrode 20 have been provided through the intermediary of an oxide film, the whole surface is covered by an oxide film 17, and an image pickup device is obtained by coating a shielding film 21 having an aperture on the above. Through these procedures, the carrier (electron) generated by the incidented beam of light on the circumference 23 of the shielding film 21 can be dissipated in the high density faulty region 15, and the noise generated due to unnecessary charge can also be reduced.