Title:
CHARGE-COUPLED TYPE SOLID-STATE IMAGE-PICKUP DEVICE WITH OVERFLOW DRAIN STRUCTURE
Document Type and Number:
Japanese Patent JP3645585
Kind Code:
B2
Abstract:
PURPOSE: To provide a charge-coupled device type solid state image-pickup device, in which an overflow drain to which an impurity of high concentration has been doped is formed on each optical diode.
CONSTITUTION: An impurity layer of high concentration is formed in an uppermost layer 9 of a PNPN structure and is used as an overflow drain 4. Consequently, overflow operation and electronic shutter operation can be performed with a low voltage, and an on-chip circuit of a solid-state image-pickup device can be realized.
Inventors:
Gold
Application Number:
JP10390794A
Publication Date:
May 11, 2005
Filing Date:
May 18, 1994
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H04N5/30; H01L27/148; H04N5/335; H04N5/353; H04N5/359; H04N5/361; H04N5/369; H04N5/372; (IPC1-7): H01L27/148; H04N5/335
Domestic Patent References:
| JP6216361A |
Attorney, Agent or Firm:
Masu Kobori