Title:
ノルボルナン系低分子化合物添加剤を含む化学増幅型レジスト組成物
Document Type and Number:
Japanese Patent JP3554532
Kind Code:
B2
Abstract:
This invention relates to a chemically amplified positive photoresist composition comprising a polyatomic copolymer whose repeating units is represented by the following formula I, a low molecular additive represented by the following formula 2 or 3, an acid generator and a solvent wherein the repeating units comprising X and Y are independent monomers, respectively, selected from the group consisting of the following formulae (II), (III) and (IV); wherein R1 is an hydrogen atom, an acetyl group, a t-butyl oxycarbonyl group, a cyclohexane carbonyl group, an adamantane carbonyl group, a linear or branched alkyl group of 1 to 20 carbon atoms such as a bicycloÄ2,2,1Üheptane methyl carbonyl group, a cyclic or polycyclic alkyl group, an alkyl carbonyl group, a branched alkyl carbonyl group, a cyclic or polycyclic alkyl carbonyl group; R2 is a hydrogen atom, a hydroxyl group, carboxylic group, an alkyl group of 1 to 20 carbon atoms, an alkyl group containing an alkoxy group, a hydroxyl group or a carboxylic acid, an alkoxy group, a linear alkyl oxycarbonyl group, a branched alkyl oxycarbonyl group, an alkoxy alkyl carbonyl group, a cyclic alkyl oxycarbonyl group or polycyclic alkyl oxycarbonyl group; R3 is a hydrogen atom, a methyl group, an ethyl group, a t-butyl group, an isopropyl group, an adamantyl group, a linear or branched alkyl group of 1 to 20 carbon atoms such as a bicycloÄ2,2,1Üheptane methyl group or a cyclic or polycyclic alkyl group. l, m, n and o, which represent the repeating units of a polymer, are 0≤(l+m+n+o) ≤0.5, 0≤m/(l+m+n+o) ≤0.5, 0≤n/(l+m+n+o) ≤0.35 and 0.4≤o/(l+m+n+o) ≤0.6, respectively, with a value of 0.15≤(l+m)/(l+m+n+o) ≤0.5. wherein R1 is the same as defined above.. wherein R2 and R3 are is the same as defined above. The resist, so prepared by this invention, has several advantages in that (1) with the introduction of a cyclic structure comprising maleic anhydride and norbornene derivatives to the main chain, the dry etch resistance can be further improved, (2) a resin having better substrate adhesion is employed via introduction of hydroxyl group to the side chain of repeating units, (3) the transparency is further improved by removing the double bonds of molecules, (4) further enhancement of sensitivity and resolution during the manufacturing process of resist is ensured using a low molecular additive introducing other different acid-decomposable functional groups, and (5) through introduction of cyclic structure into the side chain of a low molecular additive, in particular, the excellent resist patterns can be obtained with better improved properties such as the dry etch resistance and the vertical at the side wall of pattern during manufacture.
Inventors:
Theo Dong-Chul
Park Sun-I
Park Ju-Heon
Kim Seong-ju
Park Sun-I
Park Ju-Heon
Kim Seong-ju
Application Number:
JP2000301107A
Publication Date:
August 18, 2004
Filing Date:
September 29, 2000
Export Citation:
Assignee:
Korea Kumho Petrochemical Co.,Ltd.
International Classes:
C08F222/06; C08F232/00; C08F232/08; C08K5/00; C08K5/101; C08K5/17; C08L35/00; C08L45/00; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): G03F7/039; C08F222/06; C08F232/00; C08K5/00; C08K5/101; C08K5/17; C08L35/00; C08L45/00; G03F7/004; H01L21/027
Domestic Patent References:
| JP2000098615A | ||||
| JP10316720A | ||||
| JP10218941A | ||||
| JP10111569A | ||||
| JP10010739A | ||||
| JP2000508080A |
Attorney, Agent or Firm:
Masayuki Masabayashi