Title:
CLEANER OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3264405
Kind Code:
B2
Abstract:
PURPOSE: To obtain a cleaner which can easily remove a side wall protecting deposited film formed by dry etching and never corrode conducting layers made of various metal elements serving as wiring elements nor develop corrosion by making this cleaner contain a specific quaternary ammonium salt and a specific fluorine compound.
CONSTITUTION: A cleaner is made to contain a quaternary ammonium salt and a fluorine compound represented by a general formula [(R1)3N-R]+.X- (where R should be an alkyl group with a carbon number of 1-4 or a hydroxyl- substituted alkyl group with a carbon number of 1-4, R1 an alkyl group with a carbon number of 1-4, and X an inorganic or organic group.) 0therwise, it is made to contain further 1-6wt.% of one or more organic solvents selected from among amides, lactones, nitriles, alcohols, and esters. In the case of forming a wiring structure by dry etching, a protecting deposited film occurring on the conducting layer and a photoresist is peeled by using an above-mentioned semiconductor device cleaner.
Inventors:
Tetsuo Aoyama
Riako Nakano
Hideki Fukuda
Hideto Goto
Riako Nakano
Hideki Fukuda
Hideto Goto
Application Number:
JP52094A
Publication Date:
March 11, 2002
Filing Date:
January 07, 1994
Export Citation:
Assignee:
Mitsubishi Gas Chemical Co., Ltd.
Nippon Texas Instruments Co., Ltd.
Nippon Texas Instruments Co., Ltd.
International Classes:
C11D7/32; G03F7/42; H01L21/02; H01L21/304; H01L21/306; H01L21/308; H01L21/3213; (IPC1-7): H01L21/304; C11D7/32
Domestic Patent References:
| JP448633A | ||||
| JP480297A |