To provide a coating film for element isolation material which hardly generates peeling between a substrate and an element isolation layer or cracks thereof and can form a flat element isolation layer on a substrate having a concave groove.
The coating liquid for element isolation material which is used to form an element isolation layer having a shallow trench isolation structure of a semiconductor device includes an insulating film forming precursor in which an alkoxysilane compound is hydrolyzed and condensed and a solvent for preparing the concentration of the insulating film forming precursor at a desired concentration. The insulating film forming precursor is a polymer having repeating units of (Si-O) as a main skeleton, and has an alkoxy group of 2-6C on the terminal of its molecule.
KOIKE TADASHI
MANABE NOBUYUKI
JPH08130247A | 1996-05-21 | |||
JP2006310448A | 2006-11-09 | |||
JP2002289681A | 2002-10-04 | |||
JPH11181095A | 1999-07-06 | |||
JP2001261972A | 2001-09-26 | |||
JP2008159683A | 2008-07-10 | |||
JP2006336002A | 2006-12-14 | |||
JP2001210633A | 2001-08-03 | |||
JP2006303129A | 2006-11-02 | |||
JP2005320412A | 2005-11-17 | |||
JP2005183697A | 2005-07-07 | |||
JP2004006890A | 2004-01-08 |
WO2009022719A1 | 2009-02-19 |
Takanori Mamoru