Title:
COMPLEMENTARY TYPE METAL OXIDE FILM SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH05304265
Kind Code:
A
Abstract:
PURPOSE: To prevent causing of a malfunction due to the difference of a threshold value in case of a fluctuation of power supply voltage in a complementary type metal oxide film semiconductor circuit.
CONSTITUTION: A P-channel metal oxide film semiconductor transistor 10 for a threshold value control is connected to a P-channel metal oxide film semiconductor transistor 1 so as to control threshold value voltage from outside for preventing generation of a malfunction.
Inventors:
IMAI KAZUYUKI
SATO TATSUO
SATO TATSUO
Application Number:
JP8377892A
Publication Date:
November 16, 1993
Filing Date:
April 06, 1992
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L27/092; H01L21/8238; (IPC1-7): H01L27/092
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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