Title:
COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM
Document Type and Number:
Japanese Patent JP2003295456
Kind Code:
A
Abstract:
To provide a composition for the formation of an antireflection film having a high antireflection effect, free from intermixing with a resist layer, and usable for the lithographic process using irradiation light of a F2 excimer laser (at 157 nm wavelength).
The composition for the formation of an antireflection film can be used for the lithographic process in the manufacture of a semiconductor device containing a polymer compound having a carbon-carbon triple bond. The polymer compound has the carbon-carbon triple bond introduced into the main chain and/or into the side chain linked to the main chain.
Inventors:
SAKAMOTO RIKIMARU
MIZUSAWA KENICHI
MIZUSAWA KENICHI
Application Number:
JP2002101487A
Publication Date:
October 15, 2003
Filing Date:
April 03, 2002
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD
International Classes:
G03F7/11; C08F8/00; C08F12/04; C08F16/14; C08F20/10; C08F22/40; C08G8/30; C08G83/00; G03F7/20; H01L21/027; (IPC1-7): G03F7/11; C08F8/00; C08F12/04; C08F16/14; C08F20/10; C08F22/40; C08G8/30; C08G83/00; G03F7/20; H01L21/027
Attorney, Agent or Firm:
Nobuo Kaida (3 outside)
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