Title:
Compounded type semiconductor device
Document Type and Number:
Japanese Patent JP6251387
Kind Code:
B2
Abstract:
A multiple-unit semiconductor device (1) includes a normally-ON type first FET (11) and a normally-OFF type second FET (12) that are connected to each other in series between a first terminal and a second terminal (17 and 19). The multiple-unit semiconductor device (1) further includes a protection circuit that includes a switching element for discharge (16) connected to the second FET in parallel and a trigger circuit that is disposed between the first terminal and the second terminal (17 and 19) and causes the switching element for discharge to turn to an ON state when a surge is applied to the first terminal.
Inventors:
Masaya Isobe
Application Number:
JP2016519128A
Publication Date:
December 20, 2017
Filing Date:
February 12, 2015
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H03K17/08; H01L21/822; H01L21/8232; H01L27/04; H01L27/06; H03K17/16
Domestic Patent References:
| JP2012235378A | ||||
| JP2006324839A | ||||
| JP2012522410A | ||||
| JP8195664A | ||||
| JP2010109009A |
Attorney, Agent or Firm:
Sano patent office