半導体装置の制御方法

Japanese Patent JP7458273

B2

To provide a method for controlling a semiconductor device capable of reducing a loss at turn-on.SOLUTION: A semiconductor device comprises a semiconductor part between a first electrode and a second electrode, and first to three control electrodes provided between the semiconductor part and the first electrode. The semiconductor part includes a first layer of a first conductivity type, a second layer of a second conductivity type, a third layer of the first conductivity type, and a fourth layer of the second conductivity type. The second layer is provided between the first layer and the first electrode, the third layer is provided between the second layer and the first electrode, and the fourth layer is provided between the first layer and the second electrode. A first voltage higher than a threshold voltage is applied to the first control electrode at a first point of time. A second voltage higher than the threshold voltage is applied to the second control electrode at a second point of time. A third voltage higher than the threshold voltage is applied to the third control electrode at a third point of time. At a fourth point of time after the first to third points of time, the third voltage is lowered to a level lower than the threshold voltage. At a fifth point of time after the fourth point of time, the second voltage is lowered to a level lower than the threshold voltage. At a sixth point of time after the fifth point of time, the first voltage is lowered to a level lower than the threshold voltage.SELECTED DRAWING: Figure 1

Tatsunori Sakano
Ryohei Shimojo

JP2020146992A

March 29, 2024

September 01, 2020

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Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation

H01L29/739; H01L29/78

JP2012238715A
JP2000101076A

WO2018109794A1

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