CPP-TYPE MAGNETORESISTIVE EFFECT ELEMENT

Japanese Patent JP2009164579

A

To provide a high rate of magnetoresistance change while securing a soft magnetic property of a magnetic layer.

The magnetoresistive effect element includes a pair of magnetic layers 7 and 9 structured to change a relative angle formed by magnetization angles of the pair of magnetic layers 7 and 9 in response to an external magnetic field, and a crystalline spacer layer 8 sandwiched between the pair of magnetic layers, and is structured such that a sense current 22 flows in a direction orthogonal to film surfaces of the pair of magnetic layers and the spacer layer. The spacer layer 8 contains a crystalline oxide, at least one-side magnetic layer having a magnetization direction changing in response to the external magnetic field within the pair of magnetic layers 7 and 9 has a film structure where a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer, and the CoFeB layer is located between the spacer layer and the NiFe layer.

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TSUCHIYA YOSHIHIRO
HARA SHINJI
MIZUNO TOMOHITO
MIURA SATOSHI
YANAGISAWA TAKUMI

JP2008276690A

July 23, 2009

October 28, 2008

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TDK CORP

H01L43/08; G11B5/39; H01F10/16; H01L43/10

JP2008283194A	2008-11-20
JP2003008102A	2003-01-10

WO2008143118A1	2008-11-27
WO2006071724A2	2006-07-06
US20070047159A1	2007-03-01

Akio Miyazaki
Ishibashi Masayuki
Masaaki Ogata

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