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Title:
Cr-Ti ALLOY TARGET MATERIAL
Document Type and Number:
Japanese Patent JP2011252227
Kind Code:
A
Abstract:

To provide a Cr-Ti alloy target material capable of suppressing particle generation in sputtering.

The Cr-Ti alloy target material includes 40-60 atom% of Ti and includes a residual part Cr and unavoidable impurities. In the Cr-Ti alloy target material, when it is assumed that diffraction peak intensity of the (110) plane of a Cr phase in X-ray diffraction on a sputtering surface and diffraction peak intensity of the (311) plane of a TiCl2 compound phase are A and B, respectively, a relative intensity ratio B/A is ≤10%.


Inventors:
SAITO KAZUYA
FUJIMOTO MITSUHARU
TAKASHIMA HIROSHI
SAKAMAKI KOICHI
Application Number:
JP2011102721A
Publication Date:
December 15, 2011
Filing Date:
May 02, 2011
Export Citation:
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Assignee:
HITACHI METALS LTD
International Classes:
C23C14/34; C22C14/00; C22C27/06; G11B5/738; G11B5/851; B22F1/00; B22F3/15
Domestic Patent References:
JPH10298742A1998-11-10
JPH08127862A1996-05-21
JP2005154814A2005-06-16
JPH04297568A1992-10-21
JP2012041585A2012-03-01
JPH11134631A1999-05-21
JP2002212607A2002-07-31
JP2003226963A2003-08-15
JPH07254131A1995-10-03
Foreign References:
WO2009107763A12009-09-03
US20020179196A12002-12-05



 
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