Title:
CRUCIBLE FOR CZ
Document Type and Number:
Japanese Patent JP2022025867
Kind Code:
A
Abstract:
To provide a crucible for CZ capable of stably self-standing quartz glass crucible when a cylindrical quartz glass crucible with a bottom for growing a single crystal silicon ingot by a CZ method is arranged in a cylindrical graphite crucible with a bottom.SOLUTION: A crucible 1 for growing a single crystal silicon ingot by a CZ method includes a cylindrical graphite crucible 1B with a bottom and a cylindrical quartz glass crucible 1A with a bottom arranged within the graphite crucible 1B. Between an inner surface of a bottom of the graphite crucible 1B in a center axis 6 of the crucible 1 for CZ and an outer surface of the bottom of the quartz glass crucible 1A, there is a gap 7 in which the inner surface of the bottom of the graphite crucible 1B and the outer surface of the bottom of the quartz glass crucible 1A do not contact. The height of the gap 7 is 0.5 - 5.0 mm in the center axis 6 of the crucible 1 for CZ in a center axis direction. The size W of the gap 7 in a direction orthogonal to the center axis 6 of the crucible 1 for CZ is 60 mm or more in diameter.SELECTED DRAWING: Figure 1
Inventors:
TOMOKUNI KAZUKI
IKEDA KICHIKEN
IKEDA KICHIKEN
Application Number:
JP2020129012A
Publication Date:
February 10, 2022
Filing Date:
July 30, 2020
Export Citation:
Assignee:
SHINETSU QUARTZ PROD
International Classes:
C30B29/06; C03B20/00; C30B15/12; F27B14/10
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi