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Title:
CRYSTAL-GROWING FURNACE WITH CONVECTIONAL COOLING STRUCTURE
Document Type and Number:
Japanese Patent JP2009150637
Kind Code:
A
Abstract:

To provide a crystal-growing furnace with a convectional cooling structure for providing a silicon crystal ingot of desired quality without causing inner stress and corner fracture.

The crystal-growing furnace with the convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower partition. The upper partition includes an upper opening, and the lower partition with a central opening. Further, the heating room includes an upper door, a lower door, an upper driver, and a lower driver. When silicon slurry is to be cooled and solidified, cooling gaseous stream flows into a lower portion of the heating room through the central opening. Then the upper opening is opened by the upper door which is driven by the upper driver, so that heated gaseous stream is discharged from the upper opening and flows downward along furnace inside wall, and flows back to the heating room from the central opening. Therefore, an automatic convectional circulating cooling flow field is formed, such that the silicon slurry is cooled quickly with time saved and production efficiency improved.


Inventors:
LEW SHIOW-JENG
Application Number:
JP2008250165A
Publication Date:
July 09, 2009
Filing Date:
September 29, 2008
Export Citation:
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Assignee:
GREEN ENERGY TECHNOLOGY INC
International Classes:
F27B17/00; F27D5/00; F27D9/00; F27D11/02; C01B33/02
Domestic Patent References:
JP2001048696A2001-02-20
JP2003165716A2003-06-10
JP2000319094A2000-11-21
JP2005121308A2005-05-12
JPH1179880A1999-03-23
JPS56129696A1981-10-09
JPS6349694A1988-03-02
JPH11310496A1999-11-09
JPH05147918A1993-06-15
Foreign References:
US20070283882A12007-12-13
Attorney, Agent or Firm:
Hiroe Associates Patent Office