Title:
結晶育成装置
Document Type and Number:
Japanese Patent JP6790927
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a crystal growth apparatus capable of preventing efficiently raw material solidification on a crucible bottom part caused by lengthening of a crystalline to be grown, concerning a single crystal growth apparatus by a Czochralski method.SOLUTION: A crystal growth apparatus has a metal crucible capable of storing and holding a raw material melt, an induction coil provided on the periphery of the crucible, for performing induction heating of the crucible, and a bottom part auxiliary heating element provided on the furthermore upper side than such a height position that a magnetic field generated from the induction coil becomes strongest under the crucible, under a bottom surface of the crucible, and induction-heated by the induction coil.SELECTED DRAWING: Figure 1
Inventors:
Haruo Ishikawa
Masashi Sugiyama
Koichiro Maki
Masashi Sugiyama
Koichiro Maki
Application Number:
JP2017044018A
Publication Date:
November 25, 2020
Filing Date:
March 08, 2017
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
C30B15/14; C30B29/28; C30B29/30; F27B14/14; F27D11/06
Domestic Patent References:
| JP2011006314A | ||||
| JP54162686A | ||||
| JP54009173A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito