Title:
DEVICE FOR GROWING CRYSTAL
Document Type and Number:
Japanese Patent JPS57200285
Kind Code:
A
Abstract:
PURPOSE:In growing a crystal such as semiconductors, etc. by Bridgman method, to make the temperature distribution of the surface of a molten raw material flat and to enable the stable preparation of large-sized crystal, by melting the raw material by heating simultaneously through a resistance heating mechanism and a high-frequency heating mechanism. CONSTITUTION:The raw material 3 for single crystal such as metal or semiconductor is sealed in the quartz glass 2, which is suspended by the hanging line 4, dropped in the furnace, the raw material is melted, the inner melted raw material is solidified from the bottom successively by the fall of the sealed pipe 3, so that a single crystal is grown. In the operation, simultaneous heating is carried out by a furnace heating method wherein the resistance type furnace 5 is equipped with the high-frequency heating coil 6. The temperature distribution curve A of the solid-liquid interface of the raw material in the quartz tube 2 is made flat, thermal strain will not occur, and the large-sized single crystal is prepared stably.
Inventors:
NAGAHAMA KOUKI
NISHITANI KAZUO
ISHII JIYUN
NISHITANI KAZUO
ISHII JIYUN
Application Number:
JP8523881A
Publication Date:
December 08, 1982
Filing Date:
June 01, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B11/00; H01L21/02; H01L21/208; (IPC1-7): C30B11/00; H01L21/02