Title:
DEVICE FOR GROWING SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH02124793
Kind Code:
A
Abstract:
PURPOSE:To obtain a good-quality semiconductor single crystal having a low content of carbon by specifying the ratio of the heights of the inner and outer crucibles from the molten material in the double crucible, pulling up a single crystal from the inside of the inner crucible, and growing the single crystal. CONSTITUTION:A silicon material is firstly charged into a double crucible 13, a heater 14 is energized, gaseous argon is supplied from a gas inlet 19, and the material is melted. A seed crystal 16 is dipped in the melt Y to grow a single crystal T, and the material is supplied through a material supply pipe 18 to compensate for a decrease in the amt. of the melt Y. Meanwhile, the gaseous argon supplied from the gas inlet 19 flows down along the single crystal T, and flows along a virtual inclined surface connecting the upper end of the inner crucible 13B and the upper end of the outer crucible 13A. As a result, the gas close to the inside of the outer crucible 13A is brought out by the gas current, and an auxiliary current flowing through the gap between the inner crucible 13B and the outer crucible 13A is generated. The gas contg. CO and SiO is brought out by the auxiliary current without being retained, and rapidly discharged from the gap.
Inventors:
KIDA MICHIO
ARAI YOSHIAKI
ONO NAOKI
SAHIRA TATEAKI
ARAI YOSHIAKI
ONO NAOKI
SAHIRA TATEAKI
Application Number:
JP27829788A
Publication Date:
May 14, 1990
Filing Date:
November 02, 1988
Export Citation:
Assignee:
MITSUBISHI METAL CORP
International Classes:
C30B15/12; H01L21/208; (IPC1-7): C30B15/12; H01L21/208
Domestic Patent References:
| JPS63274691A | 1988-11-11 | |||
| JPH026381A | 1990-01-10 |
Attorney, Agent or Firm:
Masatake Shiga (2 outside)