Title:
METHOD FOR GROWING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH02124792
Kind Code:
A
Abstract:
PURPOSE:To obtain a single crystal without any strain in the single crystal due to the temp. change by suspending the pulling up of a seed crystal before the single crystal is completely grown, slowly controlling the temp. of a crucible, and then growing the single crystal. CONSTITUTION:The GaAs polycrystal as raw material and the B2O3 as a sealant are changed into a boron nitride crucible, heated, and melted. A seed crystal 2 held by a holder 1, which is cut out from a GaAs single crystal is brought into contact with the surface of the molten raw material 4 through the liq. sealant 3. The temp. of the molten raw material 4 is then controlled, the seed crystal 2 is rotated, and a single crystal 6 is pulled up and grown. The pulling up and rotation of the seed crystal are suspended before the single crystal 6 is completely grown, the temp. is slowly lowered, and the grown single crystal is expanded toward the inner wall of the crucible. The temp. is further slowly lowered, the single crystal is slowly cooled to room temp., and the desired single crystal is taken out.
Inventors:
ISHIBASHI HIROYUKI
SHIMIZU ICHIJI
YOSHIDA MASATO
SUSA KENZO
SHIMIZU ICHIJI
YOSHIDA MASATO
SUSA KENZO
Application Number:
JP27582388A
Publication Date:
May 14, 1990
Filing Date:
October 31, 1988
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
C30B17/00; C30B15/00; C30B15/20; H01L21/208; (IPC1-7): C30B15/00; H01L21/208
Domestic Patent References:
| JPS6090897A | 1985-05-22 |
Attorney, Agent or Firm:
Akira Hirose