Title:
ITO TARGET
Document Type and Number:
Japanese Patent JP3137803
Kind Code:
B2
Abstract:
PURPOSE: To stably obtain a transparent conductive film having excellent blackening resistance and low specific resistance.
CONSTITUTION: First, an ITO target (10wt.% SnO2) of &phiv 4"×6t is produced (bulk relative density: 98.8%, pore diameter: 4.4μm) by using ITO powder having the specific surface area (BET) or raw material powder of 30m2/g and good sinterability of ≤200μm in all grain sizes of granulated powder. This ITO target is loaded as a sputtering target into a sputtering device having a batch type DC sputtering and &phiv 4" magnetron cathode. The formation of the ITO film is executed under sputtering conditions of ≤5.0×10-6Torr ultimate pressure, 1.5×10-3Torr sputtering pressure, 30SCCM gaseous Ar+O2 and 300°C film forming temp. The surface blackening of the target is then not generated even at the time of using 80% of the target life and the ITO film having the low specific resistance of 1.7×10-4Ω.cm is stably obtd.
Inventors:
Katsuaki Okabe
Mitsunobu Ohtaki
Koichiro Ejima
Toshio Yokokawa
Ryuichi Amaha
Mitsunobu Ohtaki
Koichiro Ejima
Toshio Yokokawa
Ryuichi Amaha
Application Number:
JP11362793A
Publication Date:
February 26, 2001
Filing Date:
April 16, 1993
Export Citation:
Assignee:
DOWA MINING CO.,LTD.
International Classes:
C23C14/34; C04B35/00; C04B35/495; H01B5/14; H01B13/00; (IPC1-7): C23C14/34; C04B35/495; H01B5/14; H01B13/00
Domestic Patent References:
| JP5148636A |
Attorney, Agent or Firm:
Masahiko Maruoka