Title:
DRIVE METHOD OF SEMICONDUCTOR SWITCHING ELEMENT AND POWER SOURCE DEVICE
Document Type and Number:
Japanese Patent JP3542313
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a drive method of a semiconductor switching element for preventing large reverse current even during the start or the failure of a converter and suppressing the voltage change on the load.
SOLUTION: A first control signal corresponding to a difference between output voltage or output current and a first reference is given to the semiconductor switching element during the start of a power source device. At or after the time point when the output voltage or the output current reaches a second reference the same on larger than the first reference, a second control signal larger than the first control signal is given to the semiconductor switching element.
Inventors:
▲高▼橋 正
Kenichi Onda
Kiichi Tokunaga
Takeshi Onaka
Katsunori Hayashi
Ryohei Saga
Kenichi Onda
Kiichi Tokunaga
Takeshi Onaka
Katsunori Hayashi
Ryohei Saga
Application Number:
JP2000097828A
Publication Date:
July 14, 2004
Filing Date:
March 30, 2000
Export Citation:
Assignee:
Renesas Technology Corp.
Renesas Electronics East Japan Semiconductor Co., Ltd.
Renesas Electronics East Japan Semiconductor Co., Ltd.
International Classes:
G05F1/44; H02H7/12; H02M1/08; H02M7/12; H02M3/28; H02M3/335; H02M7/219; H03K17/16; H02H11/00; (IPC1-7): H02M3/28; G05F1/44; H02M7/12; H02M7/219
Domestic Patent References:
| JP6292360A | ||||
| JP11041918A | ||||
| JP9204230A | ||||
| JP9051678A | ||||
| JP11285258A |
Attorney, Agent or Firm:
Yamato Tsutsui
Yasuo Sakuta
Yasuo Sakuta
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