Title:
電子デバイスおよびその製造方法
Document Type and Number:
Japanese Patent JP6489016
Kind Code:
B2
Abstract:
A purpose of the present invention is to provide an electronic device that is excellent in sealing property and resistance to repetitive bending, and a method for manufacturing the electronic device. The present invention provides an electronic device including: a substrate; an electronic element main body formed on the substrate; and a sealing substrate that is bonded to the substrate via a bonding part disposed on the surrounding of the electronic element main body to seal the electronic element main body; wherein at least one of the substrate and the sealing substrate is a gas barrier film, and the bonding part contains at least one kind selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum, and a method for manufacturing the electronic device.
Inventors:
Yasuhiko Takamukai
Application Number:
JP2015528221A
Publication Date:
March 27, 2019
Filing Date:
July 09, 2014
Export Citation:
Assignee:
Konica Minolta Co., Ltd.
International Classes:
H05B33/04; B32B15/08; C09D183/14; C09D183/16; C09D201/00; G09F9/30; H01L51/50; H05B33/02; H05B33/10
Domestic Patent References:
| JP2003089165A |
Foreign References:
| WO2012105474A1 |
Other References:
須賀唯知,高分子フィルムの常温接合技術,ポリファイル,日本,2013年 7月10日,第50巻第7号,第26-29頁
KONDOU, Ryuichi et al.,Nanoadhesion layer for enhanced Si-Si and Si-SiN wafer bonding,Microelectronics Reliability,英国,2011年 1月14日,Vol.52,Page.342-346
松本 好家、須賀 唯知,「新しい常温接合技術-無機の接着剤という考え方-硝子常温接合、フィルム常温接合の成功」,コンバーテック,2012年,Vol.40,No.9,p.66-69
KONDOU, Ryuichi et al.,Nanoadhesion layer for enhanced Si-Si and Si-SiN wafer bonding,Microelectronics Reliability,英国,2011年 1月14日,Vol.52,Page.342-346
松本 好家、須賀 唯知,「新しい常温接合技術-無機の接着剤という考え方-硝子常温接合、フィルム常温接合の成功」,コンバーテック,2012年,Vol.40,No.9,p.66-69
Attorney, Agent or Firm:
Hatta International Patent Corporation