Title:
ETCHING
Document Type and Number:
Japanese Patent JPH01162339
Kind Code:
A
Abstract:
PURPOSE:To execute a plurality of etching treatments on a matter to by processed without exposing the matter to a high temperature and ion bombardment by a method wherein the kind of an energy line for reaction to the same reaction gas is changed. CONSTITUTION:Vacuum ultraviolet light 1, which uses a laser or a lamp and the like as a light source, passes through a light-transmitting window 8 and is irradiated on an Si single crystal substrate 3 placed in a reaction chamber 7. The surface of the substrate 3 is cleaned evenly at a speed of 10<2>-10<3>Angstrom /min all over the surface and an oxide film on the surface is removed. Then, soft X-rays 2 transmitted a mask 6 in a pattern form is irradiated directly on the substrate 3 whose surface has been cleaned. Whereupon, the substrate 3 is etched just according to the mask pattern. Thereby, a plurality of etching treatments are executed on a matter to be processed without exposing the matter to a high temperature and ion bombardment.
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Inventors:
TERAKADO SHINGO
Application Number:
JP32254587A
Publication Date:
June 26, 1989
Filing Date:
December 18, 1987
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/302; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Takuji Nishino (1 person outside)