Title:
EXPOSURE SYSTEM, MASK FOR EXPOSURE, EXPOSURE METHOD, DISPLAY, AND ELECTRONIC PARTS
Document Type and Number:
Japanese Patent JP2003162065
Kind Code:
A
Abstract:
To diminish defects in a pattern of a photosensitive material due to dust etc.
After first exposure, the overlap position of the mask pattern of a mask 201 for exposure and a substrate 300 to be exposed in plane view is varied by a prescribed extent in such a way that the mask pattern of the mask 201 overlaps part of a region exposed by the first exposure and exposure is carried out again. For example, when a dry film resist 60 is negative, the pattern of the light transmissive region 201a of the mask 201 corresponds to only part of a (designed) prescribed pattern of the dry film resist 60 to be left after exposure and development.
Inventors:
KOMURA HIROYUKI
Application Number:
JP2001359294A
Publication Date:
June 06, 2003
Filing Date:
November 26, 2001
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G03F1/00; G03F1/70; G03F7/20; G03F9/00; H01L21/027; (IPC1-7): G03F7/20; G03F1/08; G03F9/00; H01L21/027
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)