To provide a fabrication method of semiconductor device in which channeling phenomenon can be suppressed while retarding shadowing effect.

The method for producing a wafer 30 by cutting an ingot comprises a first step for setting an off-cut angle for substantially preventing channeling effect between the cut face of the wafer 30 and the specific crystal face of the ingot, a second step for forming an ion implantation mask pattern on the wafer 30, and a third step for implanting dopant ions substantially perpendicularly to the wafer 30. Since dopant is implanted perpendicularly to the wafer 30, channeling phenomenon can be suppressed without causing any shadowing effect. Since inclination ion implantation angle is not required to be set for each ion implantation system of different type, perfect compatibility can be ensured among various systems.