Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000031081
Kind Code:
A
Abstract:
To provide a fabrication method of semiconductor device in which fabrication time can be shortened while ensuring high fabrication yield.
The method for fabricating a semiconductor device comprises a step for forming a first thin amorphous silicon film on an insulating substrate 10, a step for forming a second thin film 53 on the first thin film 30 and forming a mask pattern 54 by etching the second thin film 53, and a step for forming source and drain regions 31, 33 by implanting impurity ions into the first thin film 30 through the mask pattern 54, wherein the step for forming the mask pattern 54 and the step for forming the source and drain regions 31, 33 are performed continuously without exposing to the atmosphere.
Inventors:
OANA YASUHISA
FUKUDA KAICHI
DOI TAKAYOSHI
FUKUDA KAICHI
DOI TAKAYOSHI
Application Number:
JP19351498A
Publication Date:
January 28, 2000
Filing Date:
July 09, 1998
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G02F1/136; G02F1/1368; H01L21/265; H01L21/266; H01L21/302; H01L21/3065; H01L21/336; H01L29/786; (IPC1-7): H01L21/266; G02F1/136; H01L21/265; H01L21/3065; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Togawa Hideaki