Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05335299
Kind Code:
A
Abstract:
PURPOSE: To form an interlayer insulating film or a protective insulating film which has an excellent coverage characteristic and a flat characteristic and further good film quality.
CONSTITUTION: A first insulating film (P-TEOS film) 4 and a second insulating film (P-SiO2 film) 5 are continuously formed on a semiconductor substrate 1 on which a wiring 3 is formed, and a third insulating film (O3-TEOS film) 6 is formed on the second insulating film (P-SiO2 film) 5.
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Inventors:
ICHINOSE SHUJI
HIRANO SHINJI
HIRANO SHINJI
Application Number:
JP13905892A
Publication Date:
December 17, 1993
Filing Date:
May 29, 1992
Export Citation:
Assignee:
KAWASAKI STEEL CO
International Classes:
H01L21/316; H01L21/768; (IPC1-7): H01L21/316; H01L21/90
Attorney, Agent or Firm:
Tetsuya Mori (2 others)