Title:
FERROELECTRIC CAPACITOR AND FERROELECTRIC/CMOS INTEGRATED STRUCTURE
Document Type and Number:
Japanese Patent JP3537041
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a ferroelectric/CMOS integrated structure having high storage characteristics.
SOLUTION: The structure comprises at least a ferroelectric material 22, a pair of electrodes 20, 24 (not decomposing when depositing or annealing) contacting opposite surfaces of the ferroelectric material 20, and an oxygen source layer 26 (made of a metal oxide at least partly decomposing in deposition and/or post-treatment) contacting at least one of electrodes 22, 24.
Inventors:
Charles, Thomas Black
Cyril Jr., Kyabura
Grill, Alfred
Debora, Newmeyer AN.
Pricer, Wilbur David
Catherine, Lynn Seengaa
Thomas, Makkarooru Shaw
Cyril Jr., Kyabura
Grill, Alfred
Debora, Newmeyer AN.
Pricer, Wilbur David
Catherine, Lynn Seengaa
Thomas, Makkarooru Shaw
Application Number:
JP2000149201A
Publication Date:
June 14, 2004
Filing Date:
May 22, 2000
Export Citation:
Assignee:
INTERNATL BUSINESS MACH CORP <IBM>
International Classes:
H01L27/04; H01L21/02; H01L21/822; H01L21/8246; H01L27/10; H01L27/105; H01L27/115; (IPC1-7): H01L21/822; H01L27/04; H01L27/10; H01L27/105
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