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Title:
FERROELECTRIC POLY (VINYLIDENE FLUORIDE) FILM ON SUBSTRATE, AND METHOD FOR FORMATION THEREOF
Document Type and Number:
Japanese Patent JP2010045059
Kind Code:
A
Abstract:

To provide a PVDF thin film which includes small dielectric loss, high reliability, and uniform surface roughness.

A method of producing a poly(vinylidene fluoride) ("PVDF") film on a substrate from a precursor solution includes: preparing the precursor solution for the PVDF film; dissolving an additive in the precursor solution, the additive being selected from the group consisting of a hydrate salt and a hygroscopic chemical; and adding the PVDF to the precursor solution to prepare a PVDF solution. The PVDF solution is coated on the substrate to form an as-deposited PVDF film, which is dried and crystallized at an elevated temperature. The dried and crystallized as-deposited PVDF film is annealed at a further elevated temperature. The further elevated temperature is greater than the elevated temperature (but less than a melting point of the as-deposited PVDF film). The additive dehydrates at the further elevated temperature.


Inventors:
YAO KUI
CHEN SHUTING
TAY FRANCIS ENG HOCK
Application Number:
JP2008131971A
Publication Date:
February 25, 2010
Filing Date:
May 20, 2008
Export Citation:
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Assignee:
AGENCY SCIENCE TECH & RES
NAT UNIV SINGAPORE
International Classes:
H01L21/312; H01B17/60; H01B17/62; H01L21/8246; H01L27/105; H01L41/193; H01L41/45; H04R17/00
Domestic Patent References:
JPH02222439A1990-09-05
Foreign References:
WO2006010491A12006-02-02
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Naomi Yoshida
Ayako Nakamura
Masayuki Okamoto
Fukagawa Eri
Satoshi Morimoto