Title:
PLASMA REACTION GAS
Document Type and Number:
Japanese Patent JP2010045058
Kind Code:
A
Abstract:
To provide plasma reaction gas showing superior etching selectivity and fine machinability, the reaction gas performing dry-etching in an etching speed and etching selectivity well balanced under high density plasma to form a fluorocarbon film less in stress relaxation even in heating treatment.
The plasma reaction gas contains 99 volume% or more perfluoro-(3-methylene cyclopentene). The gas is used for plasma reaction dry-etching, plasma reaction CVD or plasma reaction ashing.
Inventors:
SUGIMOTO TATSUYA
NAKAMURA MASAHIRO
NAKAMURA MASAHIRO
Application Number:
JP2006339300A
Publication Date:
February 25, 2010
Filing Date:
December 18, 2006
Export Citation:
Assignee:
NIPPON ZEON CO
International Classes:
H01L21/3065; C08F2/52; C08F36/04; C23C14/12; C23C16/50; H01L21/312; C07C23/08