Title:
FIELD EFFECT TYPE SEMICONDUCTOR SWITCHING ELEMENT
Document Type and Number:
Japanese Patent JPS5438778
Kind Code:
A
Abstract:
PURPOSE: To improve turn off characteristics and facilitate production by connecting the individual gate regions forming stripes of field effect type semiconductor switching elements to gate electrodes through p+ type semiconductor layer of low resistance.
Inventors:
NAGANO TAKAHIRO
MIYATA KENJI
MIYATA KENJI
Application Number:
JP10483977A
Publication Date:
March 23, 1979
Filing Date:
September 02, 1977
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/74; H01L29/10; H01L29/739; (IPC1-7): H01L29/74