To make utilization in a wider field possible by covering the tip of an emitter exposed with a substance easily emitting electrons.

This field emission type cold cathode element with a gate is produced in a transfer mold process, and the tip of an emitter 4 is covered from the top with a low-field emission electron emission material film 6 (for example, carbon film). Electron emission from the tip of the emitter 4 is conducted in a low electric field. A field emission type cold electrode element with high characteristics can easily be obtained without using complicated process, In this process, although the film 6 deposits even on a gate electrode 7 in addition to the tip of the emitter 4, electron emission from this film 6 does not occur from the relation of potential distribution, and no trouble is generated. Usually, the film deposited on the tip of the emitter 4 and the film deposited on the gate electrode 7 are separated by breaking caused by an overhanging shape of the gate electrode 7. Therefore, short circuit between the emitter 4 and the gate electrode 7 can be prevented.