To provide a film-forming method for a tungsten material wherein film-forming of the tungsten material is suppressed at periphery of a semiconductor wafer, a susceptor and a device.
A purge gas is supplied at an upper periphery of a semiconductor wafer(W) housed in a susceptor of a tungsten material film-forming device at film-forming of a tungsten material. At that time, the purge gas used contains a halogenide which forms a passivation film 208 at the periphery of the semiconductor wafer. Thereby, film-forming of the tungsten material 206 at the upper periphery of the semiconductor wafer(W) is suppressed. Therefore, even when CMP is applied to the semiconductor wafer(W) where its periphery is beveled, no such residue as tungsten material is generated at the periphery. Thus, no semiconductor wafer(W) is contaminated with residue-oriented particle, so that a semiconductor device of good yield having a dense multi-layer electrode wiring structure is manufactured in large numbers.
MITANI KATSUMI
YAMAZAKI MANABU
YOSHIDA NAOMI
TANAKA KEIICHI
Next Patent: METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE