To provide a film multilayer structure in which a polarization is increased by an epitaxial growth while imparting a consistency on a semiconductor substrate.

In the film multilayer structure, a thin layer mainly comprising epitaxial-grown zirconium oxide and the thin layer in which a (001) face is rotated in a 45° face to the thin layer mainly comprising zirconium oxide, and which has an epitaxial-grown simple perovskite structure, are formed, and an intermediate layer is formed between the thin layer having the simple perovskite structure mainly comprising zirconium oxide and the semiconductor substrate.