PURPOSE: To obtain a diamond film having dense structure at a high deposition rate by placing a base body heated to a prescribed temp. as a pretreatment in a reactive gas and forming a vapor deposited Si film having a prescribed layer thickness thereon in the stage of forming the diamond film.
CONSTITUTION: A tungsten carbide sintered hard alloy, titanium carbide cermet or titanium carbonitride cermet is heated to 300W1,000°C. The heated base body is placed in the flow of the reactive gaseous mixture essentially composed of the hydride of Si and hydrogen and/or argon and the vapor deposited Si film having 0.1W2μm average layer thickness is formed on the surface thereof. Such base body is then placed in a heated reactive gaseous mixture which is essentially composed of hydrocarbon and hydrogen and is activated by plasma discharge, etc., to form the artificial diamond film thereon. The diamond crystalline nucleus deposited in the initial period of the reaction is increased.
KOMATSU TETSUO
YAMASHITA HIROAKI
YOSHIMURA HIRONORI
JAPAN RES DEV CORP
| JPS58126972A | 1983-07-28 | |||
| JPS566920A | 1981-01-24 |
Next Patent: INK JET RECORDING METHOD AND EQUIPMENT USING THE METHOD