PURPOSE: To form a fine pattern by shaping a side wall film composed of a second material layer through anisotropic etching and attaching and leaving an electrode material layer on the side wall of the side wall film.

CONSTITUTION: A first material layer 3 having sidewalls 2 in sections to which the wiring layers of specified fine patterns are shaped is formed onto an inter- layer insulating film 1 on a semiconductor substrate, and a second material layer 5 convering the upper section of the first material layer 3 and the sidewalls 2 is shaped. Side wall films 6 are formed only on the sidewalls 2 through the isotropic etching such as RIE of a polysilicon film as the second material layer 5, the first material layer 3 is removed selectively through etching, and only the side wall films 6 are left. The electrode material layer 7 of aluminum, etc., is sputtered onto the whole surface, and the electrode material layers 7 are left on the sidewalls of the side wall films 6 through the anisotropic etching of the whole surface of the electrode material layer 7. Accordingly, the wiring layers 8 of fine patterns are formed without using a mask.