Title:
FORMING METHOD OF RESIST PATTERN
Document Type and Number:
Japanese Patent JP2674589
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent a resist pattern from deteriorating in shape without varying it in dimensions through a small number of processes when an anti-reflection film is etched by a method wherein an antireflection film is applied onto a silicon substrate and converted into silyl by heating carried out under specific conditions.
SOLUTION: An anti-reflection film 2 formed of novolak resin which contains light absorbing dye is applied onto a silicon substrate 1 and heated at a temperature of 200°C in an atmosphere of hexamethyldisilazan for five minutes to be converted to silyl. Then, resist is applied onto a sililated antireflection film 3, exposed to light through a KrF excimer laser stepper, and developed for the formation of a resist pattern 4. Then, the antireflection film 3 is etched with CF4 gas using the resist pattern 4 as a mask. By this setup, a good resist pattern which is restrained from deteriorating in shape can be obtained.
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Inventors:
Hiroshi Yoshino
Application Number:
JP29142095A
Publication Date:
November 12, 1997
Filing Date:
November 09, 1995
Export Citation:
Assignee:
NEC
International Classes:
G03F7/11; G03F7/40; H01L21/027; H01L21/302; H01L21/3065; (IPC1-7): H01L21/027; G03F7/11; G03F7/40; H01L21/3065
Attorney, Agent or Firm:
Masatake Shiga
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